PART |
Description |
Maker |
TCO-785YH TCO-785SH TCO-785SH3 TCO-787SH3 |
TCO-787SH3 TCO-785SH
|
EPSONTOYOCOM[Epson ToYoCom]
|
TCO-786ZH TCO-787ZH |
TCO-786ZH
|
EPSONTOYOCOM[Epson ToYoCom]
|
AS-V-345XT 0191540012 |
BUTT SPLICE PVC INSUL/EXPD TPD (AS-V-345
|
Molex Electronics Ltd.
|
PA7572PI-20 PA7572P-20 |
4.5 to 5.5 V, speed 20=13 ns/20 ns tpd/tpdx; programmable electrically erasable logic array
|
Anachip
|
AA-8140T |
.250X.032 FEMALE QD AVIK. TPD (AA-8140T) 1 mm2, BRASS, TIN FINISH, PUSH-ON TERMINAL
|
Molex, Inc.
|
AM9114CDCB AM91L14E/BVA AM9114EPC AM9114C/BVA AM91 |
x4 SRAM 15NS, OTP, PLCC, EXT TEMP, ROHS-A(EPLD) 5V, 20MHZ, SOIC, IND TEMP, GREEN(MCU AVR) QTR PWR,250NS,CERDIP,883C;LEV B(EPLD) x4的SRAM 25NS, OTP, PLCC, IND TEMP(EPLD) x4的SRAM 25NS, OTP, PDIP, COM TEM(EPLD) x4的SRAM
|
Linear Technology, Corp. Rohm Co., Ltd.
|
ST1KA ST1KB ST-SKL |
IC ACEX 1K FPGA 50K 144-TQFP IC, EPM7032 EPLD TPD=15NS PHOTOTRANSISTOR | NPN | 880NM PEAK WAVELENGTH | DO-31VAR 光电晶体管|叩| 880NM峰值波长|的DO - 31VAR
|
HIROSE ELECTRIC Co., Ltd.
|
CY7C1049L-25VM |
25ns, 512Kx8 static RAM (SRAM)
|
Cypress
|
UT9Q512 |
512K words by 8 bits high-performance CMOS asynchronous static RAM. 25ns acces time. 3V and 5V.
|
Aeroflex Circuit Technology
|
CY7C4261V CY7C4271V 7C4291V CY7C4271V-25JC CY7C426 |
128K x 9 low voltage Deep Sync FIFO, 15ns 64K x 9 low voltage Deep Sync FIFO, 25ns 64K x 9 low voltage Deep Sync FIFO, 15ns 16K x 9 low voltage Deep Sync FIFO, 25ns 32K x 9 low voltage Deep Sync FIFO, 15ns 16K x 9 low voltage Deep Sync FIFO, 15ns 32K x 9 low voltage Deep Sync FIFO, 25ns From old datasheet system 16K/32K/64K/128Kx9 Low Voltage Deep Sync FIFOs
|
Cypress
|
5962L9960701QUA 5962L9960701QUC 5962L9960701QUX 59 |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) 512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. 512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
|
Aeroflex Circuit Technology
|
GS820322T-138 GS82032T-66 GS82032Q-150 GS82032Q-5I |
66MHz 18ns 64K x 32 2M synchronous burst SRAM PROGRAMMER UNIVERSAL 40-PIN 64K x 32 / 2M Synchronous Burst SRAM 64K x 32 2M Synchronous Burst SRAM 64K的32 200万同步突发静态存储器 PROGRAMMER UNIV W/USB 48-PIN 64K的32 200万同步突发静态存储器 .56UF/100VDC METAL POLY CAP 64K的32 200万同步突发静态存储器 64K X 32 CACHE SRAM, 11 ns, PQFP100
|
GSI Technology List of Unclassifed Manufacturers Electronic Theatre Controls, Inc.
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